Low loss high efficiency photonic phase shifter

ABSTRACT

Photonic devices are disclosed including a first cladding layer, a first electrical contact comprising a first lead coupled to a first dielectric portion, a second electrical contact comprising a second lead coupled to a second dielectric portion, a waveguide structure comprising a slab layer comprising a first material, and a second cladding layer. The slab layer may be coupled to the first dielectric portion of the first electrical contact and the second dielectric portion of the second electrical contact. The first dielectric portion and the second dielectric portion may have a dielectric constant greater than a dielectric constant of the first material.

PRIORITY CLAIM

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/967,166, titled “Low Loss High Efficiency Photonic Phase Shifter”and filed on Jan. 29, 2020, which is hereby incorporated by reference inits entirety, as though fully and completely set forth herein.

TECHNICAL FIELD

Embodiments herein relate generally to electro-optic devices such asphase shifter and switches.

BACKGROUND

Electro-optic (EO) modulators and switches have been used in opticalfields. Some EO modulators utilize free-carrier electro-refraction,free-carrier electro-absorption, or the DC Kerr effect to modify opticalproperties during operation, for example, to change the phase of lightpropagating through the EO modulator or switch. As an example, opticalphase modulators can be used in integrated optics systems, waveguidestructures, and integrated optoelectronics.

Despite the progress made in the field of EO modulators and switches,there is a need in the art for improved methods and systems related toEO modulators and switches.

SUMMARY

Some embodiments described herein relate to photonic devices such aselectro-optical switches and phase shifters. The device may include afirst cladding layer, a first electrical contact comprising a first leadcoupled to a first dielectric portion, a second electrical contactcomprising a second lead coupled to a second dielectric portion, awaveguide structure comprising a slab layer comprising a first material,and a second cladding layer. The slab layer may be coupled to the firstdielectric portion of the first electrical contact and the seconddielectric portion of the second electrical contact.

The first dielectric portion and the second dielectric portion may havea dielectric constant greater than a dielectric constant of the firstmaterial in the direction separating the first and second dielectricportions. The dielectric constant of the first dielectric portion andthe second dielectric portion may be greater than the dielectricconstant of the first material at a first temperature that is greaterthan 1 mK, less than 77K, less than 150K, and/or within anothertemperature range. In some embodiments, the first material is atransparent material having an index of refraction that is larger thanan index of refraction of the first and second cladding layers. In someembodiments, a ratio between the dielectric constant of the first andsecond dielectric portions and the dielectric constant of the firstmaterial is 2 or greater.

The waveguide structure may include a first ridge portion comprising thefirst material and coupled to the slab layer, where the first ridgeportion is disposed between the first electrical contact and the secondelectrical contact. The ridge portion may be disposed on a first side ofthe slab layer and may extend into the first cladding layer, and thefirst dielectric portion and the second dielectric portion may coupledto the slab layer on the first side of the slab layer abutting the ridgeportion of the waveguide structure.

In other embodiments, the ridge portion is disposed on a first side ofthe slab layer and extends into the first cladding layer, where thefirst dielectric portion and the second dielectric portion are coupledto the slab layer on a second side of the slab layer opposite the firstside. In some embodiments, the first electrical contact and the secondelectrical contact are disposed on the second side of the slab layer.

In some embodiments, the first electrical contact is coupled to thefirst dielectric portion by penetrating through the slab layer from thesecond side of the slab layer to the first side of the slab layer, andthe second electrical contact is coupled to the second dielectricportion by penetrating through the slab layer from the second side ofthe slab layer to the first side of the slab layer.

In some embodiments, the first dielectric portion and the seconddielectric portion are composed of one of strontium titanate (STO),barium strontium titanate (BST), hafnium oxide, zirconium oxide,titanium oxide, graphene oxide, tantalum oxide, lead zirconium titanate(PZT), lead lanthanum zirconium titanate (PLZT), or strontium bariumniobate (SBN).

In some embodiments, the first material is one of barium titanate (BTO),barium strontium titanate (BST), lithium niobate, lead zirconiumtitanate (PZT), lead lanthanum zirconium titanate (PLZT), aluminumoxide, aluminum nitride, or strontium barium niobate (SBN).

This Summary is intended to provide a brief overview of some of thesubject matter described in this document. Accordingly, it will beappreciated that the above-described features are merely examples andshould not be construed to narrow the scope or spirit of the subjectmatter described herein in any way. Other features, aspects, andadvantages of the subject matter described herein will become apparentfrom the following Detailed Description, Figures, and Claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the various described embodiments,reference should be made to the Detailed Description below, inconjunction with the following drawings in which like reference numeralsrefer to corresponding parts throughout the Figures.

FIG. 1 is a simplified schematic diagram illustrating an optical switchaccording to some embodiments;

FIG. 2 is a simplified schematic diagram illustrating a cross section ofa waveguide structure incorporating high-K electrodes placed oppositethe waveguide ridge, according to some embodiments;

FIG. 3 is a simplified schematic diagram illustrating a cross section ofa waveguide structure incorporating high-K electrodes placed oppositethe waveguide ridge with penetrating leads, according to someembodiments;

FIG. 4 is a simplified schematic diagram illustrating a cross section ofa waveguide structure incorporating high-K electrodes placed on the sameside as the waveguide ridge, according to some embodiments;

FIG. 5 is a simplified schematic diagram illustrating a cross section ofa waveguide structure incorporating high-K electrodes and exhibiting asandwich structure, according to some embodiments;

FIG. 6 is a simplified schematic diagram illustrating a cross section ofa vertical waveguide structure incorporating high-K materials, accordingto some embodiments;

FIG. 7 is a simplified schematic diagram illustrating a cross section ofa waveguide structure with the dielectric portions inline with thewaveguide structure, according to some embodiments;

FIG. 8 is a simplified schematic diagram illustrating a cross section ofa waveguide structure with dielectric portions exhibiting ridge-likeprofiles, according to some embodiments;

FIG. 9 is a simplified schematic diagram showing a top view of awaveguide structure, according to some embodiments;

FIG. 10 is an illustration of a user interfacing with a hybrid quantumcomputing device, according to some embodiments; and

FIG. 11 is a simplified schematic diagram illustrating a cross sectionof a waveguide structure that shows the direction of an induced electricfield, according to some embodiments.

While the features described herein may be susceptible to variousmodifications and alternative forms, specific embodiments thereof areshown by way of example in the drawings and are herein described indetail. It should be understood, however, that the drawings and detaileddescription thereto are not intended to be limiting to the particularform disclosed, but on the contrary, the intention is to cover allmodifications, equivalents and alternatives falling within the spiritand scope of the subject matter as defined by the appended claims.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings. In the following detaileddescription, numerous specific details are set forth in order to providea thorough understanding of the various described embodiments. However,it will be apparent to one of ordinary skill in the art that the variousdescribed embodiments may be practiced without these specific details.In other instances, well-known methods, procedures, components,circuits, and networks have not been described in detail so as not tounnecessarily obscure aspects of the embodiments.

The foregoing description, for purpose of explanation, has beendescribed with reference to specific embodiments. However, theillustrative discussions above are not intended to be exhaustive or tolimit the scope of the claims to the precise forms disclosed. Manymodifications and variations are possible in view of the aboveteachings. The embodiments were chosen in order to best explain theprinciples underlying the claims and their practical applications, tothereby enable others skilled in the art to best use the embodimentswith various modifications as are suited to the particular usescontemplated.

Embodiments of the present invention relate to optical systems. Moreparticularly, embodiments of the present invention utilize highdielectric constant materials (i.e., high-κ materials) in opticalmodulators and switches to reduce power consumption during operation. Itis noted that, as used herein, a “high dielectric constant material” isintended to refer to a material with a high dielectric permittivitycompared to other materials within operative components of the opticalmodulator or switch, and in particular compared to the material used toconstruct the waveguide. Merely by way of example, embodiments of thepresent invention are provided in the context of integrated opticalsystems that include active optical devices, but the invention is notlimited to this example and has wide applicability to a variety ofoptical and optoelectronic systems.

According to some embodiments, the active photonic devices describedherein utilize electro-optic effects, such as free carrier inducedrefractive index variation in semiconductors, the Pockels effect, and/orthe DC Kerr effect to implement modulation and/or switching of opticalsignals. Thus, embodiments of the present invention are applicable toboth modulators, in which the transmitted light is modulated either ONor OFF, or light is modulated with a partial change in transmissionpercentage, as well as optical switches, in which the transmitted lightis output on a first output (e.g., waveguide) or a second output (e.g.,waveguide) or an optical switch with more than two outputs, as well asmore than one input. Thus, embodiments of the present invention areapplicable to a variety of designs including an M(input)×N(output)systems that utilize the methods, devices, and techniques discussedherein.

FIG. 1 is a simplified schematic diagram illustrating an optical switchaccording to an embodiment of the present invention. Referring to FIG.1, switch 100 includes two inputs: Input 1 and Input 2 as well as twooutputs: Output 1 and Output 2. As an example, the inputs and outputs ofswitch 100 can be implemented as optical waveguides operable to supportsingle mode or multimode optical beams. As an example, switch 100 can beimplemented as a Mach-Zehnder interferometer integrated with a set of50/50 beam splitters 105 and 107, respectively. As illustrated in FIG.1, Input 1 and Input 2 are optically coupled to a first 50/50 beamsplitter 105, also referred to as a directional coupler, which receiveslight from the Input 1 or Input 2 and, through evanescent coupling inthe 50/50 beam splitter, directs 50% of the input light from Input 1into waveguide 110 and 50% of the input light from Input 1 intowaveguide 112. Concurrently, first 50/50 beam splitter 105 directs 50%of the input light from Input 2 into waveguide 110 and 50% of the inputlight from Input 2 into waveguide 112. Considering only input light fromInput 1, the input light is split evenly between waveguides 110 and 112.

Mach-Zehnder interferometer 120 includes phase adjustment section 122.Voltage Vo can be applied across the waveguide in phase adjustmentsection 122 such that it can have an index of refraction in phaseadjustment section 122 that is controllably varied. Because light inwaveguides 110 and 112 still have a well-defined phase relationship(e.g., they may be in-phase, 180° out-of-phase, etc.) after propagationthrough the first 50/50 beam splitter 105, phase adjustment in phaseadjustment section 122 can introduce a predetermined phase differencebetween the light propagating in waveguides 130 and 132. As will beevident to one of skill in the art, the phase relationship between thelight propagating in waveguides 130 and 132 can result in output lightbeing present at Output 1 (e.g., light beams are in-phase) or Output 2(e.g., light beams are out of phase), thereby providing switchfunctionality as light is directed to Output 1 or Output 2 as a functionof the voltage Vo applied at the phase adjustments section 122. Althougha single active arm is illustrated in FIG. 1, it will be appreciatedthat both arms of the Mach-Zehnder interferometer can include phaseadjustment sections.

As illustrated in FIG. 1, electro-optic switch technologies, incomparison to all-optical switch technologies, utilize the applicationof the electrical bias (e.g., Vo in FIG. 1) across the active region ofthe switch to produce optical variation. The electric field and/orcurrent that results from application of this voltage bias results inchanges in one or more optical properties of the active region, such asthe index of refraction or absorbance.

Although a Mach-Zehnder interferometer implementation is illustrated inFIG. 1, embodiments of the present invention are not limited to thisparticular switch architecture and other phase adjustment devices areincluded within the scope of the present invention, including ringresonator designs, Mach-Zehnder modulators, generalized Mach-Zehndermodulators, and the like. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

In some embodiments, the optical phase shifter devices described hereinmay be utilized within a quantum computing system such as the hybridquantum computing system shown in FIG. 10. Alternatively, these opticalphase shifter devices may be used in other types of optical systems. Forexample, other computational, communication, and/or technologicalsystems may utilize photonic phase shifters to direct optical signals(e.g., single photons or continuous wave (CW) optical signals) within asystem or network, and phase shifter architectures described herein maybe used within these systems, in various embodiments.

FIGS. 2-8—Cross Sections of Photonic Phase Shifters

FIGS. 2-8 are simplified cross-section diagrams illustrating variousarchitectures for a photonic phase shifter, according to variousembodiments. Note that the architectures shown in FIGS. 2-8 areschematic illustrations, and are not necessarily drawn to scale. Whilethe architectures shown in FIG. 2-8 differ in several important designfeatures, they also share some features in common. For example, asdescribed in greater detail below, each of FIGS. 2-8 exhibit twoelectrical contacts, and each electrical contact includes a lead (230,330, 430, 530, 630, 730, and 830, as well as 232, 332, 432, 532, 632,732, and 832) connected to a dielectric electrode (240, 340, 440, 540,640, 740, and 840, as well as 242, 342, 442, 542, 642, 742, and 842). Insome embodiments, the leads may be composed of a metal, oralternatively, a semiconductor material.

The dielectric electrodes are configured to extend in close proximity tothe location of the optical mode in the wave guide, and the photonicphase shifter is configured such that a controllable voltage differencemay be introduced across the two dielectric electrodes, to alter theaccumulated phase of a photonic mode travelling through the waveguide.For example, the dielectric electrodes may be coupled, via the leads, toa voltage source that imposes the controllable voltage difference.

Importantly, the dielectric electrodes may be composed of a high-κmaterial with a large dielectric constant, such that the dielectricelectrodes have a larger dielectric constant than the material of thewaveguide and/or the slab layer. As used herein, κ is used to representthe dielectric constant, which refers to the real component of therelative permittivity, κ=Re(ε_(r))=Re(ε/ε₀), where ε_(r) is thecomplex-valued relative permittivity, ε is the absolute permittivity ofthe material, and ε₀ is the permittivity free space. It is noted forclarity that the imaginary component of ε_(r) is related to theconductivity of the material, whereas the real component, κ, is relatedto the dielectric polarizability of the material.

The dielectric constant of a material may have a different value in thepresence of a direct current (DC) voltage compared to an (AC) voltage,and the dielectric constant of the material in an AC voltage may be afunction of frequency, κ(ω). Accordingly, in some embodiments, whenselecting a material for the dielectric electrodes, the slab layer,and/or the ridge waveguide, the dielectric constant of the material maybe considered at the operating frequency of the photonic phase shifter.

The dielectric electrodes may be composed of a material with a higherdielectric constant along the direction separating the first and seconddielectric portions (e.g., the x-direction in FIGS. 2-5 and 7-8, or they-direction in FIG. 6) than the first material of the slab layer. Forexample, in anisotropic media, the permittivity tensor ε may beexpressed by the following matrix which relates the electric field E tothe electric displacement D.

$\begin{matrix}{{\begin{bmatrix}{D_{x}\left( \overset{¨}{r} \right)} \\{D_{y}\left( \overset{¨}{r} \right)} \\{D_{z}\left( \overset{¨}{r} \right)}\end{bmatrix} = {\begin{bmatrix}ɛ_{xx} & ɛ_{xy} & ɛ_{xz} \\ɛ_{yx} & ɛ_{yy} & ɛ_{\gamma z} \\ɛ_{zx} & ɛ_{z\gamma} & ɛ_{zz}\end{bmatrix}\begin{bmatrix}{E_{x}\left( \overset{¨}{r} \right)} \\{E_{y}\left( \overset{¨}{r} \right)} \\{E_{z}\left( \overset{¨}{r} \right)}\end{bmatrix}}},} & (1)\end{matrix}$

where the components ε_(xx), ε_(xy), etc., denote the individualcomponents of the permittivity tensor. In some embodiments, the materialof the first and second dielectric electrodes may be selected such thatthe diagonal component of the permittivity tensor along the directionseparating the dielectric electrodes is larger than the correspondingdiagonal component of the permittivity tensor of the material of theslab layer and/or the waveguide structure.

TABLE 1 χ⁽³⁾, Refractive Index, and Dielectric Constant Values forVarious Materials Refractive Index Dielectric Material χ⁽³⁾ (m²/W) (at1.55 μm) Constant Si 2.2 × 10⁻¹⁸ ~3.5 11.7 Si₃N₄   2 × 10⁻¹⁹ 2 7-8 1.6 ×10⁻¹⁸ 2.5   2 × 10⁻¹⁸ 2.7 Ta₂O₅ 1 × 10⁻¹⁸-4 × 10⁻¹⁸ 2.08 25-50 TiO₂ 5 ×10⁻¹⁸-6 × 10⁻¹⁷ 2.27-2.6 10-85 Graphene Oxide 4.5 × 10⁻¹⁴ 2.2 ( at 1.2μm)  2-50 STO ~2.3 10,000-24,000 (below 10K) BTO r42 > 150 pm/V ~2.3150-200 (below 10K) 1000 to 3000 (at 300K)

Table 1 illustrates the χ⁽³⁾, refractive index, and dielectric constantvalues for a variety of materials. As shown in Table 1, STO has anextremely high dielectric constant for temperatures below 10K, such thatSTO may be a desirable material to use for the dielectric electrodes,while BTO may be used for the slab layer and/or ridge portion of thewaveguide, in some embodiments.

As illustrated, the architectures shown in each of FIGS. 2-8 exhibit aphotonic device comprising first and second cladding layers. Forexample, the regions marked 210, 310, 410, 510, 610, 710, and 810represent first cladding layers on one side of the waveguide, while theregions marked 212, 312, 412, 512, 612, 712, and 812 represent secondcladding layers on the other side of the waveguide. It is noted that theterms “first” and “second” are meant simply to distinguish between thetwo cladding layers, and, for example, the term “first cladding layer”may refer to the cladding layer on either side of the waveguide. Theindex of refraction of the first and second cladding layers may be lowerthan the index of refraction of the waveguide structure, in someembodiments.

FIGS. 2-8 further exhibit a first electrical contact including a firstlead (230, 330, 430, 530, 630, 730, and 830) coupled to a firstdielectric portion (240, 340, 440, 540, 640, 740, and 840) and a secondelectrical contact including a second lead (232, 332, 432, 532, 632,732, and 842) coupled to a second dielectric portion (242, 342, 442,542, 642, 742, and 842). The first and second leads may be composed of aconducting material such as a metal, or alternatively they may becomposed of a semiconductor material. In various embodiments, the firstdielectric portion and the second dielectric portion are composed of oneor more of strontium titanate (STO), barium titanate (BTO), bariumstrontium titanate (BST), hafnium oxide, lithium niobite, zirconiumoxide, titanium oxide, graphene oxide, tantalum oxide, lead zirconiumtitanate (PZT), lead lanthanum zirconium titanate (PLZT), strontiumbarium niobate (SBN), aluminum oxide, aluminum oxide, or doped variantsor solid solutions thereof.

FIGS. 2-8 illustrate a waveguide structure including a slab layer (220,320, 420, and 520, 651, 754, and 851) comprising a first material,wherein the slab layer is coupled to the first dielectric portion of thefirst electrical contact and the second dielectric portion of the secondelectrical contact. In some embodiments, the waveguide structure furtherincludes a ridge portion (251, 351, 451, and 551) composed of the firstmaterial (or a different material, e.g., silicon nitride or any othermaterial) and coupled to the slab layer, where the ridge portion isdisposed between the first electrical contact and the second electricalcontact. In various embodiments, the first material is one of strontiumtitanate (STO), barium titanate (BTO), barium strontium titanate (BST),hafnium oxide, lithium niobite, zirconium oxide, titanium oxide,graphene oxide, tantalum oxide, lead zirconium titanate (PZT), leadlanthanum zirconium titanate (PLZT), strontium barium niobate (SBN),aluminum oxide, aluminum oxide, or doped variants or solid solutionsthereof.

In some embodiments, a second material composing the first and seconddielectric portions may be selected based on the first materialcomposing the slab layer and/or the waveguide structure. For example,the second material may be selected such that the second material has alarger dielectric constant than the dielectric constant of the firstmaterial. As one example, if the first material is BTO, the secondmaterial may be selected to be STO, which has a larger dielectricconstant than BTO at the cryogenic temperatures (e.g., 4K) at which thephotonic device is intended to operate. Advantageously, the largedielectric constant of the dielectric electrodes may enable thedielectric electrodes to be placed in closer proximity to the waveguidecompared to metallic electrodes, for a given acceptable level of lossfrom the waveguide into the electrodes. For example, the highconductivity of a metallic electrode will result in a larger degree ofphoton absorption (i.e., loss) from the waveguide compared to theabsorption of a dielectric electrode at the same separation from thewaveguide. Accordingly, the dielectric electrodes may be placed incloser proximity to the waveguide than metallic electrodes for a givenloss tolerance. The high dielectric constant of the dielectricelectrodes corresponds to a high polarizability of the dielectricmaterial, which in turn results in an energy-efficient control mechanismto adjust the electric field within the waveguide structure.

In some embodiments, the materials used for the dielectric electrodes,and the waveguide structure may be selected based on their effectivedielectric constants. For example, while the dielectric constant (or thedielectric tensor for anisotropic materials) of a material is anintrinsic material property, the effective dielectric constant of astructure is proportional to its dielectric constant but also depends onthe shape and dimensions of the structure. In these embodiments, thematerial used for the first and second dielectric portions may beselected such that the effective dielectric constant of the first andsecond dielectric portions is greater than an effective dielectricconstant of the waveguide structure.

In some embodiments, a cryogenic device such as the cryostat 1113 shownin FIG. 10 may be configured to maintain the first electrical contact,the second electrical contact, and the waveguide structure at acryogenic temperature, e.g., at or below 77 Kelvin.

In some embodiments, the first electric contact and the secondelectrical contact are configured to generate an electric field alongone or more directions, e.g., along the x-direction in the waveguidestructure, and the waveguide structure may be characterized by anelectro-optic coefficient, (e.g., χ⁽²⁾, the Pockel's coefficient, orχ⁽³⁾, the Kerr coefficient) having a non-zero value aligned along thedirection of the electric field. For example, the leads may be coupledto a voltage source that imposes a controllable (e.g., programmable)voltage difference, thereby generating an electric field in thewaveguide structure, as illustrated in FIG. 10. Additionally oralternatively, a guided mode supported by the waveguide structure mayhave a direction of polarization aligned with the x-direction.

In some embodiments, the first dielectric portion and the seconddielectric portion are configured as a second layer coplanar to the slablayer and disposed adjacent to a first side of the slab layer. Forexample, the first and second dielectric portions may be grown (e.g.,using epitaxy or another method such as metal organic chemical vapordeposition, molecular beam epitaxy, physical vapor deposition, sol-gel,etc.) onto the first side of the slab layer, such that the first andsecond dielectric layers are directly coupled to the slab layer.Alternatively, in some embodiments an intervening layer may be disposedbetween the slab layer and the first and second dielectric layer, suchthat the slab layer and the first and second dielectric layers areindirectly coupled. The intervening layer may be composed of an oxidematerial, in some embodiments.

The first dielectric portion and the second dielectric portion may beseparated by a gap region, e.g., gap region 243 or 343. In someembodiments, the gap region may have been etched out, and may be filledwith a cladding material. In some embodiments, both the first and seconddielectric portions may be grown as a single second layer over the slablayer, and a region may be subsequently etched out to separate the firstand second dielectric portions. This etched region may be subsequentlyfilled with a cladding material. Alternatively, the etched region may beleft empty (i.e., may be filled with air or vacuum).

In some embodiments, the first dielectric portion and the seconddielectric portion have a dielectric constant greater than a dielectricconstant of the first material in the direction separating the first andsecond dielectric portions. The dielectric constant of the firstdielectric portion and the second dielectric portion may be greater thanthe dielectric constant of the waveguide structure at a firsttemperature that is greater than 1 mK, ess than 77K, less than 150K,and/or within another temperature range. In some embodiments, the firstmaterial is a transparent material having an index of refraction that islarger than an index of refraction of the first and second claddinglayers. In some embodiments, a ratio between the dielectric constant ofthe first and second dielectric portions and the dielectric constant ofthe first material is 2 or greater.

The following paragraphs describe various design features that differbetween the architectures shown in FIGS. 2-8.

FIG. 2 illustrates an architecture where the ridge portion of thewaveguide structure (251) is disposed on the bottom of the slab layerand extends into the first cladding layer (210). As illustrated in FIG.2, the combination of the ridge portion and the slab layer has a firstthickness (262) greater than a second thickness (260) of the slab layeralone (220), and the excess of the first thickness relative to thesecond thickness extends into the cladding layer (210) on the bottomside of the slab layer. As illustrated in FIG. 2, the first dielectricportion (240) and the second dielectric portion (242) are coupled to theslab layer (220) on the top side of the slab layer opposite the bottomside. Further, the first electrical contact (230) and the secondelectrical contact (232) are disposed on the top side of the slab layer(220). It should be noted that the terms “top” and “bottom” are used forclarity in reference to the perspective illustrated in the Figures, anddo not necessarily refer to any particular orientation relative to theoverall device.

FIG. 3 illustrates an architecture where the ridge portion of thewaveguide structure (351) is disposed on the top side of the slab layerand extends into a first cladding layer (312), the first dielectricportion and the second dielectric portion are coupled to the slab layeron the bottom side of the slab layer opposite the top side. Asillustrated, the combination of the ridge portion and the slab layer hasa first thickness (362) greater than a second thickness (360) of theslab layer alone (320), and the excess of the first thickness relativeto the second thickness extends into the first cladding layer (312) onthe top side of the slab layer (320). As illustrated in FIG. 3, thefirst dielectric portion (340) and the second dielectric portion (342)are coupled to the slab layer (320) on the bottom side of the slab layeropposite the top side. Further, the first electrical contact (330) iscoupled to the first dielectric portion (340) by penetrating through theslab layer (320) from the top side of the slab layer to the bottom sideof the slab layer, and the second electrical contact (332) is coupled tothe second dielectric portion (342) by penetrating through the slablayer (320) from the top side of the slab layer to the bottom side ofthe slab layer.

FIG. 4 illustrates an architecture where the combination of the slablayer and the ridge portion of the waveguide structure (451) has a firstthickness (462) greater than a second thickness (460) of the slab layer(420), and the excess of the first thickness relative to the secondthickness extends into the first cladding layer (412) on the top side ofthe slab layer. As illustrated in FIG. 4, the first dielectric portion(440) and the second dielectric portion (442) are coupled to the firstmaterial (420) on the top side of the slab layer. Further the firstdielectric portion (440) and the second dielectric portion (442) abutthe ridge portion of the waveguide structure (451).

FIG. 5 illustrates an architecture where the waveguide structureincludes a first strip waveguide portion (554) and a second stripwaveguide portion (556), where the first and second strip waveguideportions are composed of a second and third material, respectively, andwhere the slab layer (520) is disposed between the first strip waveguideportion (554) and the second strip waveguide portion (556). The firstand second strip waveguide portions may be composed of the same ordifferent materials. For example, they may each be separately composedof silicon nitride (Si₃N₄), silicon dioxide (SiO₂), aluminum oxide(Al₂O₃), or another similar material.

FIG. 6 illustrates a vertical waveguide architecture where the firstdielectric portion (642) is coupled to the slab layer (651) on the topside of the slab layer and the second dielectric portion (640) iscoupled to the slab layer (651) on the bottom side of the slab layeropposite the top side. In other words, the first and second dielectricportions are coupled to the top and bottom sides of the waveguidestructure, such that the induced electric field within the waveguidestructure is oriented along the y-direction.

FIG. 7 illustrates a waveguide architecture where each of the first(740) and second (742) dielectric portions are disposed inline with thewaveguide structure (754). In other words, each of the first and seconddielectric portions and the waveguide structure are disposed within asingle layer with a single width.

FIG. 8 illustrates a waveguide architecture where the first (840) andsecond (842) dielectric portions share a ridge-like profile with thewaveguide structure (851), where the ridge-like profile extends into thefirst cladding layer (812). For example, the first dielectric portion(840) may include a ridge portion (844) having a thickness (862) that isgreater than a thickness (860) of the remainder of the first dielectricportion, and the second dielectric portion (842) may include a ridgeportion (846) having a thickness (862) that is greater than thethickness (860) of the remainder of the second dielectric portion.Further, the ridge portions of the first and second dielectric portionsmay exhibit the same thickness as the waveguide structure (851).

FIG. 9—Top-down View of Photonic Phase-Shifter

FIG. 9 is a top-down view of a photonic phase-shifter architecture,according to some embodiments. As illustrated, the phase-shifter mayinclude first (930) and second (932) leads, first (940) and second (942)dielectric portions, a slab layer (920), and a ridge portion of thewaveguide structure (951).

FIG. 10—Hybrid Quantum Computing System

FIG. 10 is a simplified system diagram illustrating incorporation of anelectro-optic switch with a cryostat into a hybrid quantum computingsystem, according to some embodiments. In order to operate at lowtemperatures, for example liquid helium temperatures, embodiments of thepresent invention integrate the electro-optic switches discussed hereininto a system that includes cooling systems. Thus, embodiments of thepresent invention provide an optical phase shifter that may be usedwithin a hybrid computing system, for example, as illustrated in FIG. 8.The hybrid computing system 1101 includes a user interface device 1103that is communicatively coupled to a hybrid quantum computing (QC)sub-system 1105. The user interface device 1103 can be any type of userinterface device, e.g., a terminal including a display, keyboard, mouse,touchscreen and the like. In addition, the user interface device canitself be a computer such as a personal computer (PC), laptop, tabletcomputer and the like. In some embodiments, the user interface device1103 provides an interface with which a user can interact with thehybrid QC subsystem 1105. For example, the user interface device 1103may run software, such as a text editor, an interactive developmentenvironment (IDE), command prompt, graphical user interface, and thelike so that the user can program, or otherwise interact with, the QCsubsystem to run one or more quantum algorithms. In other embodiments,the QC subsystem 1105 may be pre-programmed and the user interfacedevice 1103 may simply be an interface where a user can initiate aquantum computation, monitor the progress, and receive results from thehybrid QC subsystem 1105. Hybrid QC subsystem 1105 further includes aclassical computing system 1107 coupled to one or more quantum computingchips 1109. In some examples, the classical computing system 1107 andthe quantum computing chip 1109 can be coupled to other electroniccomponents 1111, e.g., pulsed pump lasers, microwave oscillators, powersupplies, networking hardware, etc.

In some embodiments that utilize cryogenic operation, the quantumcomputing system 1109 can be housed within a cryostat, e.g., cryostat1113. In some embodiments, the quantum computing chip 1109 can includeone or more constituent chips, e.g., hybrid electronic chip 1115 andintegrated photonics chip 1117. Signals can be routed on- and off-chipany number of ways, e.g., via optical interconnects 1119 and via otherelectronic interconnects 1121.

FIG. 11—Induced Electric Field in Photonic Phase Shifter

FIG. 11 is a simplified schematic diagram illustrating a cross sectionof the waveguide structure shown in FIG. 2, where the direction of theinduced electric field is illustrated with arrows, according to someembodiments. As illustrated, the small arrows show the induced electricfield direction which generally points along the positive x-directionthrough the dielectric portions of the device. The electric field curvesin a convex manner both above and below the dielectric portions, asillustrated. Furthermore, the large arrow (1150) pointing in thepositive x-direction illustrates the direction of polarization of anoptical mode that may travel through the slab layer and the waveguide.

Additional Embodiments

The following numbered paragraphs describe additional embodiments.

In some embodiments, a device comprises a first cladding layer, a firstelectrical contact including a first lead coupled to a first dielectricportion, a second electrical contact including a second lead coupled toa second dielectric portion, a waveguide structure including a slablayer composed of a first material, and a second cladding layer. Theslab layer is coupled to the first dielectric portion of the firstelectrical contact and the second dielectric portion of the secondelectrical contact. The first dielectric portion and the seconddielectric portion have a dielectric constant greater than a dielectricconstant of the first material in a first direction.

In some embodiments, the first dielectric portion is coupled to the slablayer on a first side of the slab layer and the second dielectricportion is coupled to the slab layer on a second side of the slab layeropposite the first side. See, e.g., FIG. 6.

In some embodiments, the first dielectric portion and the seconddielectric portion are configured to generate an electric field along anx-direction in the waveguide structure.

In some embodiments, the waveguide structure is characterized by anelectro-optic coefficient having a nonzero value aligned along thex-direction.

In some embodiments, a cryogenic device configured to maintain the firstelectrical contact, the second electrical contact, and the waveguidestructure at or below 77 Kelvin.

In some embodiments, the dielectric constant of the first dielectricportion and the second dielectric portion is greater than the dielectricconstant of the first material in the first direction at a firsttemperature that is greater than 1 mK.

In some embodiments, the dielectric constant of the first dielectricportion and the second dielectric portion is greater than the dielectricconstant of the first material in the first direction at a firsttemperature that is greater than 1 mK and less than 77K or 150K.

In some embodiments, the first dielectric portion, the second dielectricportion, and the waveguide structure are disposed within a single layerhaving a first thickness, and the waveguide structure is disposedbetween the first and second dielectric portions. See, e.g., FIG. 7.

In some embodiments, the first dielectric portion and the seconddielectric portion each include a respective ridge structure having afirst thickness greater than a second thickness of a slab structure ofthe first and second dielectric portions. The first thickness is thesame as the thickness of the waveguide structure. In these embodiments,the waveguide structure is disposed between the first and seconddielectric portions and is coupled to the ridge structures of the firstand second dielectric portions. See, e.g., FIG. 8.

In some embodiments, the first and second leads are composed of a metal.

In some embodiments, the first and second leads are composed of asemiconductor material.

In some embodiments, the first dielectric portion and the seconddielectric portion are composed of one of barium strontium titanate,hafnium oxide, zirconium oxide, titanium oxide, graphene oxide, tantalumoxide, lead zirconium titanate, lead lanthanum zirconium titanate, orstrontium barium niobate.

In some embodiments, the slab layer is composed of one of bariumstrontium titanate, lithium niobate, lead zirconium titanate, leadlanthanum zirconium titanate, aluminum oxide, aluminum nitride, orstrontium barium niobate.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

1. A device, comprising: a first cladding layer; a first electricalcontact comprising a first lead and a first dielectric portion, whereinthe first lead is coupled to the first dielectric portion; a secondelectrical contact comprising a second lead and a second dielectricportion, wherein the second lead is coupled to the second dielectricportion, and wherein the first dielectric portion and the seconddielectric portion are separated by a gap region; a waveguide structurecomprising a slab layer composed of barium titanate, wherein the slablayer is coupled to the first dielectric portion of the first electricalcontact and the second dielectric portion of the second electricalcontact; a ridge portion coupled to the slab layer, wherein the ridgeportion is disposed between the first electrical contact and the secondelectrical contact; and a second cladding layer, wherein the firstdielectric portion and the second dielectric portion have a dielectricconstant in a first direction greater than a dielectric constant in thefirst direction of barium titanate, wherein the first directioncomprises a direction separating the first dielectric portion from thesecond dielectric portion, and wherein the first direction is parallelto the slab layer.
 2. The device of claim 1, wherein the ridge portionis disposed on a first side of the slab layer and extends into the firstcladding layer, and wherein the first dielectric portion and the seconddielectric portion are coupled to the slab layer on a second side of theslab layer opposite the first side.
 3. The device of claim 1, whereinthe slab layer is composed of a different material than the ridgeportion.
 4. A device, comprising: a first cladding layer; a firstelectrical contact comprising a first lead and a first dielectricportion, wherein the first lead is coupled to the first dielectricportion; a second electrical contact comprising a second lead and asecond dielectric portion, wherein the second lead is coupled to thesecond dielectric portion; a waveguide structure comprising a slab layercomposed of a first material, wherein the slab layer is coupled to thefirst dielectric portion of the first electrical contact and the seconddielectric portion of the second electrical contact; and a secondcladding layer, wherein the first dielectric portion and the seconddielectric portion have a dielectric constant in a first direction thatis greater than a dielectric constant in the first direction of thefirst material.
 5. The device of claim 4, wherein the waveguidestructure further comprises a first ridge portion coupled to the slablayer, wherein the first ridge portion is disposed between the firstelectrical contact and the second electrical contact.
 6. The device ofclaim 5, wherein the slab layer is composed of barium titanate, andwherein the first ridge portion is composed of silicon nitride.
 7. Thedevice of claim 5, wherein the first ridge portion is composed of thefirst material.
 8. The device of claim 5, wherein the first ridgeportion is disposed on a first side of the slab layer and extends intothe first cladding layer, and wherein the first dielectric portion andthe second dielectric portion are coupled to the slab layer on the firstside of the slab layer.
 9. The device of claim 5, wherein the ridgeportion is disposed on a first side of the slab layer and extends intothe first cladding layer, wherein the first dielectric portion and thesecond dielectric portion are coupled to the slab layer on a second sideof the slab layer opposite the first side.
 10. The device of claim 9,wherein the first electrical contact and the second electrical contactare disposed on the second side of the slab layer.
 11. The device ofclaim 9, wherein the first electrical contact is coupled to the firstdielectric portion by penetrating through the slab layer from the secondside of the slab layer to the first side of the slab layer, and whereinthe second electrical contact is coupled to the second dielectricportion by penetrating through the slab layer from the second side ofthe slab layer to the first side of the slab layer.
 12. The device ofclaim 4, wherein the first dielectric portion and the second dielectricportion are composed of strontium titanate, and wherein the slab layeris composed of barium titanate.
 13. The device of claim 4, wherein thewaveguide structure further comprises a first strip waveguide portionand a second strip waveguide portion, wherein the first and second stripwaveguide portions are composed of a second and a third material,respectively, and wherein the slab layer is disposed between the firststrip waveguide portion and the second strip waveguide portion.
 14. Thedevice of claim 13, wherein the second and third materials are siliconnitride.
 15. The device of claim 4, wherein the first dielectric portionand the second dielectric portion are comprised within a second layercoplanar to the slab layer and disposed adjacent to a first side of theslab layer.
 16. The device of claim 4, wherein the first dielectricportion and the second dielectric portion are separated by a gap region.17. The device of claim 4, wherein the first material has an index ofrefraction that is larger than an index of refraction of the first andsecond cladding layers.
 18. The device of claim 4, wherein a ratiobetween the dielectric constant of the first and second dielectricportions and the dielectric constant of the first material in the firstdirection is 2 or greater.
 19. The device of claim 4, wherein the firstdirection comprises a direction parallel to the slab layer andseparating the first dielectric portion from the second dielectricportion.
 20. An optical switch, comprising: at least one input port; atleast one output port; a Mach-Zehnder interferometer coupled to a beamsplitter, wherein the Mach-Zehnder interferometer comprises a first armand a second arm; a photonic phase shifter comprised within the firstarm of the Mach-Zehnder interferometer, the photonic phase shiftercomprising: a first cladding layer; a first electrical contactcomprising a first lead coupled to a first dielectric portion; a secondelectrical contact comprising a second lead coupled to a seconddielectric portion; a waveguide structure comprising a slab layercomposed of a first material, wherein the slab layer is coupled to thefirst dielectric portion of the first electrical contact and the seconddielectric portion of the second electrical contact; and a secondcladding layer, wherein the first dielectric portion and the seconddielectric portion have a dielectric constant in a first direction thatis greater than a dielectric constant in the first direction of thefirst material.